AMI Catalog - Biased Schottky Diode Detectors

Features:	•	High Sensitivity	•	Low Output Resistance
	•	Extremely Wideband	•	Wide Dynamic Range

• The Biased Schottky Diode Detector is ideal for applications where a pulsed RF signal is required.

Specifications					Rev.
Model	Frequency Range (GHz)	Flatness (± dB)	K Factor mV/mW	TSS (dBm)	Output Capacitance (PF)
BSD1001	0.1 - 0.5	0.5	1600	-52	50
BSD1002	0.5 - 2.0	0.5	1600	-52	50
BSD1003	2.0 - 4.0	0.5	1600	-52	20
BSD1004	4.0 - 8.0	0.6	1600	-52	20
BSD1005	8.0 - 18.0	0.8	1200	-50	20
BSD1006	1.0 - 18.0	1.0	1200	-50	20
BSD1007	18 - 40.0	1.5	1000	-48	20

• The specifications above are based on a 2MHz bandwidth and a 3 dB Noise Figure Amplifier and a -20 dBm input level @ Bias current of 50 micro Amp.

Ordering information:
• Negative output polarity is standard; add P to the end of the model number for positive output.
• Input connector is SMA-F (or K-F). Add "A" for SMA-M (or K-M).

Maximum Ratings:	Operating Temperature:	-55 °C to +125 °C
	Storage Temperature:	-55 °C to +150°C
	Shock:	50 G. 11 msec.
	Vibration:	20 G. 100 to 2000 Hz